DocumentCode
1845226
Title
Harmonic vs. geometric mean Sinh integrators in weak inversion CMOS
Author
Glaros, K.N. ; Katsiamis, A.G. ; Drakakis, E.M.
Author_Institution
Dept. of Bioeng., Imperial Coll. London, London
fYear
2008
fDate
18-21 May 2008
Firstpage
2905
Lastpage
2908
Abstract
In this paper a novel, practical, low-power, Class-AB companding hyperbolic sine (Sinh) integrator based on the harmonic mean law is presented. MOS transistors operating in their weak inversion region are used for low power and low supply voltage operation. All translinear loops are implemented using single-type devices allowing for fabrication on standard, twin-well CMOS processes. Detailed simulation results from Cadence IC Design Framework and the commercially available AMS 0.35 mum process parameters are reported and discussed. The proposed circuit achieves more than 120 dB of input dynamic range, and a frequency tunability of over 4 decades with a power consumption of less than 1.5 muW. In addition, head-to-head comparison with our previously reported (ISCAS ´07) geometric-mean Sinh integrator is performed in an attempt to shed more light on the potential of this very promising class of current-mode companding filters.
Keywords
CMOS analogue integrated circuits; MOSFET; integrating circuits; MOS transistors; current-mode companding filters; frequency tunability; geometric-mean Sinh integrator; hyperbolic sine integrator; power consumption; translinear loops; twin-well CMOS processes; weak inversion CMOS; CMOS process; Circuit simulation; Dynamic range; Energy consumption; Fabrication; Frequency; Low voltage; MOSFETs; Power harmonic filters; Power supplies; Class-AB; Companding; ELIN processors; Sinh integrators; log-domain filters; translinear circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4542065
Filename
4542065
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