A package-process-oriented multilevel 5-μm-thick Cu wiring technology with pulse periodic reverse electroplating and photosensitive resin

Author

Kikuchi, Katsuni ; Takamiya, Makoto ; Kudoh, Yuji ; Soejima, Koji ; Honda, Hirokazu ; Mizuno, Masayulu ; Yamamichi, Shintaro

Author_Institution

Functional Mater. Res. Lab., NEC Corp., Kanagawa, Japan

fYear

2003

fDate

2-4 June 2003

Firstpage

189

Lastpage

191

Abstract

A package-process-oriented multilevel 5-μm-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-μm CMOS ULSI with three layers of 0.5 μm-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-μm-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.

Keywords

ULSI; copper; dielectric materials; electric resistance; electroplating; high-speed integrated circuits; integrated circuit packaging; power supply circuits; resins; wiring; 0.13 micron; 0.5 micron; 5 micron; CMOS; Cu; dry etching; global wirings; high-speed ULSI; interlayer dielectrics; package-process-oriented multilevel Cu wiring technology; photosensitive resin; power supply wirings; pulse periodic reverse electroplating; wiring resistance; Artificial intelligence; Costs; Fabrication; National electric code; Packaging; Power supplies; Resins; Resists; Ultra large scale integration; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219750

Filename

1219750