DocumentCode
1845371
Title
The affect of bias voltage to the DC test of GMR spin valve biosensors
Author
Zhao, Fulong ; Qu, Bingjun ; Lei, Bo ; Ren, Tianling ; Liu, Litian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2009
fDate
18-21 Oct. 2009
Firstpage
81
Lastpage
84
Abstract
This paper presents the fabrication process of a GMR spin-valve biosensor, and discusses the general design rules of the plane structure of the biosensor. The resistance variation of the sensor is studied versus the magnetic excitation field when 1ul solution of nanoparticles (150nm in diameter) with a concentration of 25mg/ml is directly dropped on the surface of the sensor. The experimental results show that the sensor´s resistance had a non-zero change when the magnetic excitation field (Hf) equals zero, and it reaches the minimum when a particular negative magnetic excitation field (Hf) is applied. The detection accuracy of our biosensor is tested using a Wheatstone bridge circuit, and the results indicates that the fringe field of nanoparticles in 1μl solution with a concentration of 0.25μg/ml can be detected when the excitation field is -9Oe, but it is undetectable with a zero field.
Keywords
biosensors; bridge circuits; spin valves; DC test; GMR spin valve biosensor; Wheatstone bridge circuit; bias voltage; fabrication process; magnetic excitation field; plane structure; resistance variation; Biosensors; Copper; Heating; Immune system; Magnetic field measurement; Biosensor; DC test; Spin valve sensor; nanoparticle;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Molecular Medicine and Engineering (NANOMED), 2009 IEEE International Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-5528-7
Type
conf
DOI
10.1109/NANOMED.2009.5559115
Filename
5559115
Link To Document