• DocumentCode
    1845371
  • Title

    The affect of bias voltage to the DC test of GMR spin valve biosensors

  • Author

    Zhao, Fulong ; Qu, Bingjun ; Lei, Bo ; Ren, Tianling ; Liu, Litian

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2009
  • fDate
    18-21 Oct. 2009
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    This paper presents the fabrication process of a GMR spin-valve biosensor, and discusses the general design rules of the plane structure of the biosensor. The resistance variation of the sensor is studied versus the magnetic excitation field when 1ul solution of nanoparticles (150nm in diameter) with a concentration of 25mg/ml is directly dropped on the surface of the sensor. The experimental results show that the sensor´s resistance had a non-zero change when the magnetic excitation field (Hf) equals zero, and it reaches the minimum when a particular negative magnetic excitation field (Hf) is applied. The detection accuracy of our biosensor is tested using a Wheatstone bridge circuit, and the results indicates that the fringe field of nanoparticles in 1μl solution with a concentration of 0.25μg/ml can be detected when the excitation field is -9Oe, but it is undetectable with a zero field.
  • Keywords
    biosensors; bridge circuits; spin valves; DC test; GMR spin valve biosensor; Wheatstone bridge circuit; bias voltage; fabrication process; magnetic excitation field; plane structure; resistance variation; Biosensors; Copper; Heating; Immune system; Magnetic field measurement; Biosensor; DC test; Spin valve sensor; nanoparticle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Molecular Medicine and Engineering (NANOMED), 2009 IEEE International Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-5528-7
  • Type

    conf

  • DOI
    10.1109/NANOMED.2009.5559115
  • Filename
    5559115