Title :
Pulsed I-V Diagnostic Measurements for RF GaAs Devices
Author :
Johnson, Eric M.
Author_Institution :
Motorola, Semiconductor Products Sector, Wireless Subscriber Systems Group R&D, 111-V Device Development, 2100 East Elliot Road, Mail Drop EL720, Tempe, Arizona 85284, (602) 413-4673 RZAL90@email.sps.mot.com
Abstract :
This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.
Keywords :
Circuit testing; Dispersion; Gallium arsenide; Isothermal processes; Knee; Postal services; Power generation; Pulse measurements; Radio frequency; Research and development;
Conference_Titel :
ARFTG Conference Digest-Spring, 51st
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1998.327282
