DocumentCode
1845622
Title
Process optimization-the key to obtain highly reliable Cu interconnects
Author
Fischer, A.H. ; von Glasow, A. ; Penka, S. ; Ungar, F.
Author_Institution
Reliability Methodology, Infineon Technol. AG, Munich, Germany
fYear
2003
fDate
2-4 June 2003
Firstpage
253
Lastpage
255
Abstract
In this paper, we describe electromigration and stressvoiding mechanism in copper interconnects.
Keywords
copper; electromigration; internal stresses; reliability; silicon compounds; voids (solid); Cu interconnects; Cu-SiN; electromigration; process optimization; stressvoiding; Copper; Electrical resistance measurement; Electromigration; Etching; High temperature superconductors; Metallization; Monitoring; Plugs; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN
0-7803-7797-4
Type
conf
DOI
10.1109/IITC.2003.1219768
Filename
1219768
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