• DocumentCode
    1845706
  • Title

    Carbon nanotube interconnects: a process solution

  • Author

    Li, Jun ; Ye, Qi ; Cassell, Alan ; Koehne, Jessica ; Ng, H.T. ; Han, Jie ; Meyyappan, M.

  • Author_Institution
    NASA Ames Res. Center, Moffett Field, CA, USA
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    271
  • Lastpage
    272
  • Abstract
    The susceptibility of common interconnect metals to electromigration at current densities of 106 A/cm2 or greater has been a concern. The ITRS Roadmap emphasizes interconnect technology as a critical element and calls for innovative material and process solutions. This talk will present the potential of carbon nanotubes (CNTs) as interconnects and a processing scheme to integrate them in device fabrication.
  • Keywords
    carbon nanotubes; current density; electromigration; interconnections; optical susceptibility; plasma CVD; C; CNT; SiO2; carbon nanotube; current density; electromigration; interconnect metals; interconnect technology; susceptibility; Carbon nanotubes; Conducting materials; Current density; Electromigration; Etching; Filling; Lithography; Mechanical factors; NASA; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219773
  • Filename
    1219773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1845706