Title :
IGBT modelling using HSPICE
Author :
Zhang, Li ; Watthanasarn, C. ; Shepherd, W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
Abstract :
This paper discusses a simple method for IGBT modelling, which requires only circuit element parameters and does not involve the user in implementing mathematical equations. The structure of the model is comprised of a bipolar junction transistor (BJT) combined with a metal oxide field effect/transistor (MOSFET). The parameters are estimated using an optimization algorithm in HSPICE and the device test data. Results showing a close fit of model output to the experimental data are presented
Keywords :
SPICE; circuit analysis computing; insulated gate bipolar transistors; optimisation; parameter estimation; semiconductor device models; BJT; HSPICE; IGBT modelling; MOSFET; bipolar junction transistor; circuit element parameters; metal oxide field effect/transistor; optimization algorithm; parameters estimation; Application software; Circuit simulation; Equations; FETs; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; SPICE; Semiconductor process modeling; Switching frequency;
Conference_Titel :
Power Electronics Congress, 1996. Technical Proceedings. CIEP '96., V IEEE International
Conference_Location :
Cuernavaca
Print_ISBN :
0-7803-3633-X
DOI :
10.1109/CIEP.1996.618532
