DocumentCode
1846184
Title
Improvement of gate drive for self-power emitter turn-off thyristor (SPETO)
Author
Chen, Qian ; Huang, Alex Q.
Author_Institution
FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA
fYear
2010
fDate
7-10 Nov. 2010
Firstpage
516
Lastpage
520
Abstract
Self-power emitter turn-off thyristor (SPETO) is a high power switching device which could provide power for its gate drive during operation. Self-power function reduces the system cost and makes the mechanical structure compact, whereas it may bring extra harmonic when SPETO is being utilized in power utilities. In this paper, the impact of self-power function on extra harmonic is analyzed. The ideas to improve SPETO gate drive hence reduce extra harmonic are presented and verified by simulation.
Keywords
MOS-controlled thyristors; harmonic analysis; power semiconductor switches; SPETO; gate drive; harmonic analysis; high power switching device; mechanical structure; self-power emitter turn-off thyristor; Capacitors; Generators; Harmonic analysis; Inductors; Logic gates; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society
Conference_Location
Glendale, AZ
ISSN
1553-572X
Print_ISBN
978-1-4244-5225-5
Electronic_ISBN
1553-572X
Type
conf
DOI
10.1109/IECON.2010.5675201
Filename
5675201
Link To Document