Title :
Improvement of gate drive for self-power emitter turn-off thyristor (SPETO)
Author :
Chen, Qian ; Huang, Alex Q.
Author_Institution :
FREEDM Syst. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
Self-power emitter turn-off thyristor (SPETO) is a high power switching device which could provide power for its gate drive during operation. Self-power function reduces the system cost and makes the mechanical structure compact, whereas it may bring extra harmonic when SPETO is being utilized in power utilities. In this paper, the impact of self-power function on extra harmonic is analyzed. The ideas to improve SPETO gate drive hence reduce extra harmonic are presented and verified by simulation.
Keywords :
MOS-controlled thyristors; harmonic analysis; power semiconductor switches; SPETO; gate drive; harmonic analysis; high power switching device; mechanical structure; self-power emitter turn-off thyristor; Capacitors; Generators; Harmonic analysis; Inductors; Logic gates; Thyristors; Voltage control;
Conference_Titel :
IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society
Conference_Location :
Glendale, AZ
Print_ISBN :
978-1-4244-5225-5
Electronic_ISBN :
1553-572X
DOI :
10.1109/IECON.2010.5675201
