Evolution and status of smart power technology

Author

Baliga, B.Jayant

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1993

fDate

7-11 Mar 1993

Firstpage

18

Lastpage

21

Abstract

The progress made in power semiconductor technology that has led to the evolution of smart power integrated circuits is reviewed. The displacement of bipolar power transistors with power MOSFETs and insulated gate bipolar transistors (IGBTs) is a crucial element that has a significant impact on power electronic applications. Trends in technological developments and approaches under investigation to create the next generation of power switching devices are provided. Examples of smart power chips under development around the world highlight the emphasis being given to this area by the semiconductor industry

Keywords

insulated gate bipolar transistors; insulated gate field effect transistors; power electronics; power transistors; IGBT; insulated gate bipolar transistors; power MOSFET; power electronic applications; power semiconductor technology; power switching devices; smart power chips; smart power technology; Bipolar transistors; Doping; Integrated circuit technology; MOSFETs; Neutrons; Power engineering and energy; Power engineering computing; Silicon carbide; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0983-9

Type

conf

DOI

10.1109/APEC.1993.290656

Filename

290656