A new driving and protective circuit of IGBT for motor drive application

Author

Sasagawa, Kiyoaki ; Miki, Hiroshi

Author_Institution

Fuji Electric Corp. Res. & Dev. Ltd., Tokyo, Japan

fYear

1993

fDate

7-11 Mar 1993

Firstpage

402

Lastpage

407

Abstract

A driving method is proposed such that the drive circuit for the insulated gate bipolar transistor (IGBT) inverter can be highly integrated. This method employs a level shift circuit consisting of two power MOSFETs. The circuit configuration operation and test results of this method are described. A protective method for the IGBT against a short circuit accident is proposed. The characteristics of an IGBT at a short circuit accident are shown, and the protective method based on those characteristics is described. The configuration, operation, and test results of the gate drive circuit in which this protective function is incorporated are shown. The design concept of the snubber circuit employing this protective method against a short circuit accident is proposed, and the effectiveness of this design concept is proved by test results and simulation

Keywords

driver circuits; electric drives; electric motors; insulated gate bipolar transistors; insulated gate field effect transistors; invertors; overcurrent protection; power transistors; IGBT; application; characteristics; design; drive circuit; insulated gate bipolar transistor; inverter; motor drive; overcurrent protection; power MOSFETs; power transistors; short circuit accident; simulation; snubber circuit; testing; Accidents; Circuit testing; Insulated gate bipolar transistors; Inverters; MOSFETs; Motor drives; Protection; Pulse circuits; Snubbers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0983-9

Type

conf

DOI

10.1109/APEC.1993.290691

Filename

290691