Title :
High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers
Author :
Arz, Uwe ; Williams, Dylan F. ; Walker, David K. ; Grabinski, Hartmut
Author_Institution :
Laboratorium fÿr Informationstechnologie, Universitÿt Hannover, Schneiderberg 32, D-30167 Hannover, Germany, Phone: [+49] 511.762.5032 Fax: [+49] 511.762.5051 E-mail: uarz@lfi.uni-hannover.de
Abstract :
In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 ¿m CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
Keywords :
CMOS technology; Conductivity; Conductors; Couplings; Geometry; Metallization; Silicon; Substrates; Testing; Transmission line measurements;
Conference_Titel :
ARFTG Conference Digest-Fall, 56th
Conference_Location :
Boulder, AZ, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.2000.327425
