Title :
Designation of a kind of high precision voltage source CMOS bandgap
Author :
Shengbiao An ; Yueting Wei ; Shuwang Chen ; Huanming Wen
Author_Institution :
HeBei Univ. of Sci. & Technol., Shijiazhuang, China
Abstract :
Bandgap reference (BGR) voltage source plays an important role in mixed-signal and RF integrated circuits nowadays. It is widely used in high accuracy comparators, data converters and high sensitive RF circuits, etc. As the development of integrated circuits, the requirements for high performance BGR voltage source are becoming much more stringent than ever before. In order to meet those strict requirements, a new design method of BGR voltage source is proposed in this paper. The first level temperature compensation, current feedback technique, temperature compensation of biasing circuits and RC phase margin compensation technique are used in this proposed method. A low power, low temperature coefficient and high power supply rejection CMOS BGR voltage source is realized through the use of those techniques. The BGR circuit is realized in TSMC 0.18 process and simulated through Specture simulation tool. The simulation results show that the performance of BGR circuit is suitable for low power application fields.
Keywords :
CMOS integrated circuits; low-power electronics; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; CMOS; RC phase margin compensation; RF circuits; RF integrated circuits; Specture simulation tool; bandgap reference voltage source; biasing circuits; comparators; current feedback technique; data converters; mixed-signal integrated circuits; temperature compensation; PSRR; bandgap; bandgap voltage reference; low temperature coefficient;
Conference_Titel :
Signal Processing (ICSP), 2012 IEEE 11th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-2196-9
DOI :
10.1109/ICoSP.2012.6491765