Title :
Low current enhancement mode MMICs for portable communication applications
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
A successful application of GaAs enhancement mode MESFET technology has been demonstrated for a portable communication system. A description is given of a single-stage enhancement mode FET amplifier dissipating about 10 mW of power and achieving a gain of 10 dB with a return loss of 14 dB at 900 MHz. This completely monolithic amplifier was unconditionally stable inside and outside the frequency band. High- and low-temperature performance of the amplifier is also reported. The circuit was tested at 70 degrees C and at -20 degrees C to study the temperature dependence of the circuit. While no appreciable degradation was observed at 70 degrees C, a drop in gain of about 2 dB was noticed at -20 degrees C.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; microwave amplifiers; mobile communication systems; ultra-high-frequency amplifiers; -20 degC; 10 dB; 10 mW; 14 dB; 70 degC; 900 MHz; GaAs; MESFET technology; MMICs; UHF; enhancement mode; high-temperature performance; low current type; low-temperature performance; monolithic amplifier; portable communication applications; single-stage FET amplifier; temperature dependence; Circuit testing; Degradation; FETs; Frequency; Gain; Gallium arsenide; MESFETs; MMICs; Power amplifiers; Temperature dependence;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69295
