Title :
Rapid scanning delay line for optical coherence tomography based on the thermo-optic effect in silicon
Author :
Margallo-Balbás, E. ; Pandraud, G. ; French, P.J.
Author_Institution :
Electron. Instrum. Lab., Tech. Univ. Delft, Delft, Netherlands
Abstract :
A novel delay line for time domain optical coherence tomography (OCT) is demonstrated optically. The measured devices, which are based on the thermo-optic effect of silicon, are able to reach line acquisition speeds in excess of 10 kHz and produce a scan of 410 mum in air. Attention is drawn to the effect of group velocity dispersion originating in the material properties of silicon on system resolution, and some methods to compensate it. The results obtained make video-rate time-domain optical coherence tomography practical and offer a way to reduce the cost, complexity and footprint of final OCT systems. Taking into account the ability of SOI technology to serve as an integration platform for other necessary components, sources and detectors, this work is also a step forward towards fully integrated single-chip OCT systems.
Keywords :
integrated optics; optical delay lines; optical dispersion; optical tomography; silicon; silicon-on-insulator; thermo-optical effects; SOI technology; Si-SiO2; fully integrated single-chip OCT system; group velocity dispersion; optical coherence tomography; rapid scanning delay line; silicon photonics; thermo-optic effect; video-rate time-domain OCT; Costs; Delay lines; Detectors; Dispersion; Material properties; Silicon; Thermooptic effects; Time domain analysis; Tomography; Velocity measurement; Optical coherence tomography; rapid scanning delay line; silicon photonics; thermo-optic effect;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285371
