DocumentCode :
1850379
Title :
Connection characteristics of silicon nanowire waveguides and fabrication of physical contact switches
Author :
Bulgan, E. ; Kanamori, Y. ; Hane, K.
Author_Institution :
Dept. of Mech. Eng., Ozyegin Univ., Istanbul, Turkey
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
505
Lastpage :
508
Abstract :
Optical characteristics of silicon nanowire waveguide connections are studied both theoretically and experimentally. Effects of geometrical sizes and positional alignments on optical performance are investigated. Results show that waveguide connections with tips wider than 500 nm and tip angles greater than critical angle enable high transmittance and less sensitivity to positional misalignments. Connection with 1.5 mum-wide tip at 74deg tip angle is experimentally found to yield 96.3% transmittance at 200 nm offset distance. 1 times 2 mechanical switch using the aforementioned silicon nanowire waveguide geometry is designed and fabricated. Studied results are useful for realizing low-loss microelectromechanically-actuated connections in silicon subwavelength integrated optical circuits in the telecommunication field.
Keywords :
elemental semiconductors; integrated optics; nanowires; optical design techniques; optical fabrication; optical switches; optical waveguides; semiconductor quantum wires; silicon; Si; connection characteristics; critical angle; geometrical sizes; low-loss microelectromechanically-actuated connections; optical characteristics; optical design; optical fabrication; physical contact switches; positional alignments; silicon nanowire waveguides; silicon subwavelength integrated optical circuits; telecommunication field; transmittance; Geometrical optics; Integrated circuit yield; Integrated optics; Optical device fabrication; Optical sensors; Optical switches; Optical waveguide theory; Optical waveguides; Silicon; Telecommunication switching; Nanowire waveguide; Optical connection; Optical switch; Physical contact; Silicon waveguide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285372
Filename :
5285372
Link To Document :
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