A distributed optical receiver preamplifier with unequal gate/drain impedances

Author

Darwazeh, I. ; Moreira, Paulo ; Borjak, A. ; O´Reilly, J.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

fYear

1995

fDate

15-16 May 1995

Firstpage

199

Lastpage

202

Abstract

A near dc to 16.4 GHz wide band distributed amplifier, constructed using a 20 GHz MMIC GaAs process and optimised to operate as an optical receiver front end preamplifier, has been designed, realised and tested at 10 Gbit/s. The design uses a 75 /spl Omega/ gate line impedance to maximise the overall transimpedance gain without introducing severe bandwidth restriction.<>

Keywords

MESFET integrated circuits; MMIC amplifiers; distributed amplifiers; field effect MMIC; integrated circuit design; optical receivers; preamplifiers; wideband amplifiers; 0 to 16.4 GHz; 10 Gbit/s; 75 ohm; GaAs; MESFET amplifiers; MMIC process; bandwidth restriction; distributed preamplifier; front end preamplifier; gate line impedance; optical receiver; transimpedance gain; unequal gate/drain impedances; wideband amplifier; Bandwidth; Design optimization; Distributed amplifiers; Gallium arsenide; Impedance; MMICs; Optical design; Optical receivers; Preamplifiers; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470958

Filename

470958