Title :
A 2-32 GHz coplanar waveguide InAlAs/InGaAs-InP HBT cascode distributed amplifier
Author :
Kobayashi, K.W. ; Cowles, J. ; Tran, L. ; Block, T. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A 2-32 GHz InAlAs/InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth reported for an HBT DA. The DA combines a 100 GHz f/sub max/ and 60 GHz f/sub T/ HBT technology with a cascode coplanar waveguide DA topology to achieve this record bandwidth. The cascode CPW DA demonstrates both design techniques and technology capability which can be applied to more complex circuit functions such as active baluns for mixers, active combiners/dividers, and low dc power-broadband amplification at millimeter-wave frequencies.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistor circuits; coplanar waveguides; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 2 to 32 GHz; 60 to 100 GHz; InAlAs-InGaAs-InP; InAlAs/InGaAs-InP HBT distributed amplifier; active baluns; active combiners/dividers; cascode coplanar waveguide topology; circuit functions; low DC power-broadband amplification; millimeter-wave frequencies; mixers; Bandwidth; Circuit topology; Coplanar waveguides; Distributed amplifiers; Frequency conversion; Heterojunction bipolar transistors; Impedance matching; Indium compounds; Millimeter wave circuits; Millimeter wave technology;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470959
