Title :
High repetition frequency power nanosecond pulse generation
Author :
Kardo-Sysoev, A.F. ; Zazulin, S.V. ; Efanov, N.M. ; Lelitov, O. ; Kriklenko, A.V.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
June 29 1997-July 2 1997
Abstract :
A new type of semiconductor opening switch-drift step recovery diodes (DSRD)-gave rise to a new generation of all solid state nanosecond pulsers with peak power up to a hundred megawatts. The main advantages of these switches are: long life, very good time stability (low jitter), small sizes, and a respectively simple technology of manufacturing. They have a very important feature as well: the total length of both plasma pumping and plasma removing cycles are several hundreds (100-300) of nanoseconds even for high power pulse generation. After the end of the plasma removing cycle, DSRD is in an initial opening state and is ready for the next cycle. Generally speaking, it is possible to generate power pulses at megahertz pulse repetition rates. The presented work is devoted to this mode description.
Keywords :
plasma switches; power semiconductor diodes; power semiconductor switches; power supplies to apparatus; pulse generators; pulsed power switches; 100 to 300 ns; drift step recovery diodes; high power pulse generation; high repetition frequency pulse generation; initial opening state; low jitter; megahertz pulse repetition rates; nanosecond pulse power generation; plasma pumping; plasma removing cycles; semiconductor opening switch; solid state nanosecond pulsers; time stability; Frequency; Jitter; Plasma materials processing; Plasma stability; Power generation; Power semiconductor switches; Pulse generation; Semiconductor device manufacture; Semiconductor diodes; Solid state circuits;
Conference_Titel :
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location :
Baltimore, MA, USA
Print_ISBN :
0-7803-4213-5
DOI :
10.1109/PPC.1997.679366
