Title :
A 9-16 GHz monolithic HEMT low noise amplifier with embedded limiters
Author :
Huang, P. ; Jones, W.L. ; Oki, A. ; Streit, D. ; Yamasaki, W. ; Liu, P. ; Bui, S. ; Nelson, B.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A novel 9-16 GHz monolithic HEMT low noise amplifier with on-chip limiters has been designed, fabricated, and measured. This paper presents the design topology, the new fabrication technology, and the on-wafer measurements of this circuit. The limiter consists of one PIN diode and one Schottky diode. The low noise amplifier itself is a single stage balanced amplifier with one limiter embedded in each single-ended amplifier.<>
Keywords :
HEMT integrated circuits; MMIC amplifiers; field effect MMIC; microwave limiters; 9 to 16 GHz; PIN diode; Schottky diode; circuit; design topology; embedded limiters; fabrication technology; monolithic HEMT low noise amplifier; on-chip limiters; on-wafer measurements; single stage balanced amplifier; Circuit noise; Fabrication; HEMTs; Insertion loss; Low-noise amplifiers; Noise figure; Noise measurement; Radiofrequency amplifiers; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470962
