Title :
Capacitive-division traveling-wave amplifier with 340 GHz gain/bandwidth product
Author :
Pusl, J. ; Agarwal, Basant ; Pullela, R. ; Nguyen, L.D. ; Le, M.V. ; Rodwell, M.J.W. ; Larson, L. ; Jensen, J.F. ; Yu, R.Y. ; Case, M.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report capacitive-division traveling-wave amplifiers having measured midband gains of 8 dB with a 1-98 GHz 3-dB-bandwidth, and 11 dB gain with a 1-96 GHz bandwidth. The capacitive-division topology raises the input Q of each cell, giving the amplifier increased bandwidth over conventional designs with the same active device technology; using 0.15-/spl mu/m gate length InGaAs/InAlAs HEMTs, bandwidths exceeding 150 GHz are feasible.<>
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave amplifiers; travelling wave amplifiers; wideband amplifiers; 0.15 micron; 1 to 96 GHz; 1 to 98 GHz; 11 dB; 8 dB; 96 GHz; 98 GHz; InGaAs-InAlAs; InGaAs/InAlAs HEMTs; active device technology; capacitive-division topology; gain/bandwidth product; input Q; traveling-wave amplifier; Attenuation; Bandwidth; Broadband amplifiers; Capacitance; Equivalent circuits; Gain; HEMTs; MODFETs; Millimeter wave transistors; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470964
