Monolithic mixers with MESFETs technology to up and down convert between C and V band

Author

Torres, J.P. ; Fortes, F. ; Joao Rosario, M. ; Dieudonne, J.M. ; Costa Freire, J.

Author_Institution

Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal

fYear

1995

fDate

15-16 May 1995

Firstpage

167

Lastpage

170

Abstract

In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; MMIC mixers; Schottky diode mixers; Schottky diodes; field effect MMIC; gallium arsenide; 6 GHz; 6 to 8 dB; C band; GaAs; MESFETs; Schottky diodes; V band; bandwidth; conversion losses; design; downconverter; harmonic balance simulations; monolithic mixers; singly balanced mixers; upconverter; Bandwidth; Circuit testing; Circuit topology; Coupling circuits; Diodes; Gallium arsenide; Impedance; MESFETs; Mixers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470966

Filename

470966