Title :
Monolithic mixers with MESFETs technology to up and down convert between C and V band
Author :
Torres, J.P. ; Fortes, F. ; Joao Rosario, M. ; Dieudonne, J.M. ; Costa Freire, J.
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
In this paper the design of singly balanced mixers to convert C to V band signals are presented. A step by step design technique is described, based on harmonic balance simulations. The mixer devices are Schottky diodes compatible with a GaAs MESFET technology. The mixer was optimised for minimum conversion losses on the widest possible bandwidth when used as an up or downconverter in order to be used on a large number of applications. The experiments show a minimum conversion losses on the range of 6 to 8 dB for both applications (up and downconverter) and a 3 dB bandwidth larger then 6 GHz.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; MMIC mixers; Schottky diode mixers; Schottky diodes; field effect MMIC; gallium arsenide; 6 GHz; 6 to 8 dB; C band; GaAs; MESFETs; Schottky diodes; V band; bandwidth; conversion losses; design; downconverter; harmonic balance simulations; monolithic mixers; singly balanced mixers; upconverter; Bandwidth; Circuit testing; Circuit topology; Coupling circuits; Diodes; Gallium arsenide; Impedance; MESFETs; Mixers; Radio frequency;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470966
