DocumentCode :
1850798
Title :
Test of a double-sided double-metal silicon microstrip detector with an ONO insulator
Author :
Tsuboyama, T. ; Haba, J. ; Ikeda, H. ; Iwasaki, H. ; Matsuda, T. ; Ozaki, H. ; Tanaka, M. ; Yamada, Y. ; Saito, Y. ; Akamine, K. ; Inoue, M. ; Yamanaka, J. ; Kadoi, K. ; Takano, R. ; Kojima, Y. ; Miyahara, S. ; Kamiya, M. ; Okuno, S. ; Avrillon, S. ; Hazu
Author_Institution :
Dept. of Phys., Nat. Lab. for High Energy Phys., Ibaraki, Japan
Volume :
1
fYear :
1995
fDate :
21-28 Oct 1995
Firstpage :
192
Abstract :
A double-sided double-metal silicon microstrip detector with an ONO (SiO2-Si3N4-SiO2) insulator has been tested. The full-depletion voltage and field plate voltage were found to be 50 V and -25 V, respectively. The results of tests with an infrared (IR) laser and a 90Sr β source are presented
Keywords :
beta-ray detection; silicon radiation detectors; -25 V; 50 V; 90Sr β source; IR laser; ONO insulator; Si; SiO2-Si3N4-SiO2; double-sided double-metal Si microstrip detector; field plate voltage; full-depletion voltage; infrared laser; Capacitance; Decision support systems; Detectors; Insulation; Insulator testing; Microstrip; Physics; Silicon; Strips; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
Type :
conf
DOI :
10.1109/NSSMIC.1995.504207
Filename :
504207
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1850798
بازگشت