DocumentCode
1850839
Title
Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film
Author
Saitoh, Y. ; Akamine, T. ; Inoue, M. ; Yamanaka, J. ; Kadoi, K. ; Takano, R. ; Kojima, Y. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Matsuda, T. ; Tsuboyama, T. ; Ozaki, H. ; Tanaka, M. ; Iwasaki, H. ; Haba, J. ; Higashi, Y. ; Yamada, Y. ; Okuno, S. ; Avri
Author_Institution
Seiko Instrum. Inc., Chiba, Japan
Volume
1
fYear
1995
fDate
21-28 Oct 1995
Firstpage
201
Abstract
Double-sided silicon microstrip detectors (DSSDs) in which integrated coupling capacitors containing an ONO (oxide-nitride-oxide) dielectric film were fabricated using newly developed processing techniques. We report the processing techniques and some characteristics of the detectors fabricated in this study
Keywords
semiconductor technology; silicon radiation detectors; ONO capacitor dielectric film; Si; double-sided silicon microstrip detector; integrated coupling capacitors; oxide-nitride-oxide dielectric film; processing techniques; Capacitors; Conductivity; Decision support systems; Detectors; Dielectric films; Fabrication; Microstrip; Resistors; Silicon; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-3180-X
Type
conf
DOI
10.1109/NSSMIC.1995.504209
Filename
504209
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