Author :
Saitoh, Y. ; Akamine, T. ; Inoue, M. ; Yamanaka, J. ; Kadoi, K. ; Takano, R. ; Kojima, Y. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Matsuda, T. ; Tsuboyama, T. ; Ozaki, H. ; Tanaka, M. ; Iwasaki, H. ; Haba, J. ; Higashi, Y. ; Yamada, Y. ; Okuno, S. ; Avri
Abstract :
Double-sided silicon microstrip detectors (DSSDs) in which integrated coupling capacitors containing an ONO (oxide-nitride-oxide) dielectric film were fabricated using newly developed processing techniques. We report the processing techniques and some characteristics of the detectors fabricated in this study
Keywords :
semiconductor technology; silicon radiation detectors; ONO capacitor dielectric film; Si; double-sided silicon microstrip detector; integrated coupling capacitors; oxide-nitride-oxide dielectric film; processing techniques; Capacitors; Conductivity; Decision support systems; Detectors; Dielectric films; Fabrication; Microstrip; Resistors; Silicon; Strips;
