A family of low cost high performance HEMT MMICs for commercial DBS applications

Author

Hubbard, K. ; MacGowan, K. ; Kau, C. ; Smith, D. ; Maas, S.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

133

Lastpage

136

Abstract

A family of GaAs HEMT MMICs have been developed for use in Direct Broadcast Satellite TV (DBS) US, Japanese, and European markets. These designs are very compact, high performance, and self-biased. They are meant as building blocks for low noise block (LNB) downconverters. Described in this paper are the receiver chip, low noise amplifier, and self-biased single HEMT device (should a MIC LNA be preferred). The key design is the receiver chip with a nominal gain of 38 dB and NF of less than 3 dB for the US band. This paper presents a description of each design, a performance summary, as well as information describing their actual use in an LNB design.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; television receivers; 3 dB; 38 dB; DBS; Direct Broadcast Satellite TV; Europe; GaAs; HEMT MMICs; Japan; MIC LNA; US; low noise amplifier; low noise block downconverters; receiver chip; self-biased single HEMT device; Costs; Gain; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Microwave integrated circuits; Noise measurement; Satellite broadcasting; TV;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470974

Filename

470974