Title :
Nanostructured polymer transistors for volatile organic compound detection
Author :
Li, Bo ; Lambeth, David N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Abstract :
In this paper, we show that the chemical sensing responses of organic thin film transistors (OTFTs) based on nanostructured regioregular polythiophene are strongly dependent upon the gate biasing field and the operation mode. With different applied gate voltages the source-drain current response can be different both in sign and magnitude for the same analyte. Using swept gate voltages, sensors show larger response than when operated with a constant gate voltage. These results imply that multiple, competing sensing mechanisms exist. We propose that the sensing mechanisms for polycrystalline semiconducting polymer thin films are mainly an intragrain effect, which yields a positive response, and a grain boundary effect, which yields a negative response. Noise properties of the OTFT sensors were also investigated. For the typical sensor operation frequency range these results show that low frequency noise is the dominant noise source.
Keywords :
chemical sensors; polymer films; thin film transistors; chemical sensing responses; constant gate voltage; gate biasing field; grain boundary effect; nanostructured polymer transistors; nanostructured regioregular polythiophene; organic thin film transistors; polycrystalline semiconducting polymer thin films; swept gate voltages; volatile organic compound detection; Gas detectors; Low-frequency noise; Organic chemicals; Organic thin film transistors; Polymers; Semiconductivity; Semiconductor device noise; Thin film transistors; Volatile organic compounds; Voltage; 1/f noise; VOC; Volatile organic compound; noise; organic field-effect transistor; polythiophene;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285395