Hydrogen degradation of GaAs MMICs and hydrogen evolution in the hermetic package

Author

Saito, Y. ; Griese, R. ; Kessler, J. ; Kono, R. ; Fang, J.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

119

Lastpage

122

Abstract

An investigation of hydrogen degradation of GaAs MMICs (MESFET, PHEMT and HBT) was conducted to determine the threshold hydrogen concentration for spacecraft application. The maximum hydrogen in the hermetic package is found to be 0.6 torr (based on 10 year mission at ambient temperature of 125/spl deg/C). Hydrogen evolution in hermetic package is also studied to determine the source of hydrogen and to minimize its level in the package. Both studies demonstrate the high reliability of hermetic A40 (Al/Si) and Kovar (Fe/Ni/Co) packages for spacecraft applications.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; bipolar MMIC; field effect MMIC; gallium arsenide; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; life testing; seals (stoppers); space vehicle electronics; 0.6 torr; 125 degC; AlSi; FeNiCo; GaAs; HBT ICs; MESFET ICs; MMICs; PHEMT ICs; hermetic A40 packages; hermetic Kovar packages; hermetic package; hydrogen degradation; hydrogen evolution; reliability; spacecraft application; threshold hydrogen concentration; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MESFETs; MMICs; PHEMTs; Packaging; Space vehicles; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470977

Filename

470977