Title :
Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
Author :
Tkachenko, Y.A. ; Wei, C.J. ; Hwang, J.C.M. ; Harris, T.D. ; Grober, R.D. ; Hwang, D.M. ; Aucoin, L. ; Shanfield, S.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.<>
Keywords :
high electron mobility transistors; hot carriers; semiconductor device reliability; electrical stress; hot-electron-induced degradation; pseudomorphic high-electron mobility transistors; reliability; temperature stress; Degradation; Electron traps; Gallium arsenide; HEMTs; MESFETs; MODFETs; PHEMTs; Radio frequency; Stress; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470978
