Title :
Reliability of InP-based HBT IC technology for high-speed, low-power applications
Author :
Hafizi, M. ; Stanchina, W.E. ; Williams, F., Jr. ; Jensen, J.F.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
We report on the reliability of an InP-based heterojunction bipolar transistor IC technology for very high-speed and low power applications. We have performed extensive accelerated lifetest experiments under bias and temperature stress and found mean-time-to-failures (MTTF) in excess of 10/sup 7/ hours at 125/spl deg/C junction temperatures. We have also exposed our devices to a hydrogen ambient, particularly important for integrated circuits in hermetically sealed packages. We did not observe any difference in the characteristics of devices with or without exposure to hydrogen ambient. In addition we have performed extensive lifetest experiments on tantalum-nitride (TaN) thin-film resistors (TFR) used in our IC process. Our TFR reliability performance exceeded the active device reliability, as required in a reliable IC process.<>
Keywords :
III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit reliability; integrated circuit technology; 125 C; 1E7 hour; H/sub 2/; HBT IC technology; InP; TaN; accelerated lifetest; active device; bias stress; hermetically sealed packages; heterojunction bipolar transistor; high-speed low-power applications; hydrogen ambient; integrated circuits; mean-time-to-failures; reliability; tantalum-nitride thin-film resistors; temperature stress; Acceleration; Application specific integrated circuits; Bipolar integrated circuits; Hermetic seals; Heterojunction bipolar transistors; High speed integrated circuits; Hydrogen; Integrated circuit packaging; Stress; Temperature;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470979
