DocumentCode :
1851146
Title :
CPW phase shifter using barium strontium titanate thin film on silicon substrate
Author :
Hargsoon Yoon ; Vinoy, K.J. ; Abraham, J.K. ; Varadan, V.K.
Author_Institution :
Center of Eng. of Electron. & Acoust. Mater. & Devices, Pennsylvania State Univ., University Park, PA, USA
Volume :
3
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
970
Abstract :
In this paper the design and development of a coplanar waveguide phase shifter on high resistivity silicon substrate is presented. This design makes use of BaSrTiO/sub 3/ thin film (50% dielectric tunability) grown on SiO/sub 2//poly-Si by RF sputtering method. A new process flow has been developed to enable full compatibility for direct integration with current CMOS technology. Other important features of this design are the bilateral interdigital structure, and the inclusion of a polysilicon layer for improved performance.
Keywords :
barium compounds; coplanar waveguide components; ferroelectric devices; ferroelectric thin films; microwave phase shifters; silicon; sputtered coatings; strontium compounds; BaSrTiO/sub 3/; CMOS technology; RF sputtering; Si; bilateral interdigital structure; coplanar waveguide phase shifter; dielectric tunability; direct integration; ferroelectric thin film; full compatibility; high resistivity silicon substrate; polysilicon layer; process flow; Barium; Coplanar waveguides; Dielectric substrates; Dielectric thin films; Phase shifters; Semiconductor thin films; Silicon; Sputtering; Strontium; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium, 2003. IEEE
Conference_Location :
Columbus, OH, USA
Print_ISBN :
0-7803-7846-6
Type :
conf
DOI :
10.1109/APS.2003.1220072
Filename :
1220072
Link To Document :
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