Title :
Monolithic VCO and mixer for Q-band transceiver using InP-based HBT process
Author :
Tran, L. ; Cowles, J. ; Block, T. ; Huei Wang ; Yonaki, J. ; Lo, D. ; Dow, S. ; Allen, B. ; Streit, D. ; Oki, A. ; Loughran, S.
Author_Institution :
Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Monolithic VCOs and mixers have been developed for Q-band FMCW transceiver applications using an InP-based HBT process. Tuning range, output power, and phase noise have been characterized for the HBT VCOs, while conversion loss and noise figure were measured for the Schottky diode mixers. The VCO shows 10-dB better phase noise performance over a similar design based on a GaAs HBT process. Measured at very low IF, the InP-based Schottky diode mixer demonstrates more than 1 dB noise figure improvement over the same design based on GaAs Schottky process. The InP mixer also requires a very low LO power at only 1 dBm for a 8-dB conversion loss.<>
Keywords :
III-V semiconductors; MMIC mixers; MMIC oscillators; Schottky diode mixers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; microwave oscillators; transceivers; voltage-controlled oscillators; 8 dB; HBT VCOs; IF; InP; Q-band FMCW transceiver; Schottky diode mixers; conversion loss; monolithic VCO/mixer chip; noise figure; output power; phase noise; tuning range; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Noise measurement; Phase noise; Power generation; Power measurement; Schottky diodes; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470981
