• DocumentCode
    1851218
  • Title

    A multi-channel time-to-digital converter chip for drift chamber readout

  • Author

    Chau, Alan ; DeBusschere, Derek ; Dow, Scott ; Flasck, J. ; Levi, Michael E. ; Kirsten, Frederick ; Su, Edwin ; Santos, Dinis M.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    1
  • fYear
    1995
  • fDate
    21-28 Oct 1995
  • Firstpage
    285
  • Abstract
    A complete, multi-channel, timing and amplitude measurement IC for use in drift chamber applications is described. By targeting specific resolutions, i.e. 6-bits of resolution for both time and amplitude, area and power can be minimized while achieving the proper level of measurement accuracy. Time is digitized using one eight channel TDC comprised of a delay locked loop and eight sets of latches and encoders. Amplitude (for dE/dx) is digitized using a dual-range FADC for each channel. Eight bits of dynamic range with six bits of accuracy are achieved with the dual-range. The timing and amplitude information is multiplexed into one DRAM (Dynamic Random Access Memory) trigger latency buffer. Interesting events are then transferred into an SRAM (Static Random Access Memory) readout buffer before the latency time has expired. The design has been optimized to achieve the requisite resolution using the smallest area and lowest power. The circuit has been implemented in a 0.8 μ triple metal CMOS process. The TDC sub-element has been measured to have better than 135 ps time resolution and 35 ps jitter. The DRAM has a measured cycle time of 80 MHz
  • Keywords
    DRAM chips; SRAM chips; detector circuits; drift chambers; nuclear electronics; 135 ps time resolution; 35 ps jitter; 6-bit resolution; DRAM; Dynamic Random Access Memory; SRAM; Static Random Access Memory; TDC sub-element; cycle time; delay locked loop; drift chamber readout; dual-range FADC; eight channel TDC; encoders; latches; multi-channel amplitude measurement IC; multi-channel time-to-digital converter chip; multi-channel timing measurement; multiplexed information; readout buffer; requisite resolution; specific resolution targeting; trigger latency buffer; triple metal CMOS process; Application specific integrated circuits; Area measurement; Delay effects; Dynamic range; Latches; Power measurement; Random access memory; Semiconductor device measurement; Time measurement; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-3180-X
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1995.504227
  • Filename
    504227