Title :
Ultra-low DC power GaAs HBT S-band low noise amplifiers
Author :
Kobayashi, K.W. ; Oki, A.K. ; Tran, L.T. ; Streit, D.C.
Author_Institution :
Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report on a 2.1 mW low DC power GaAs HBT LNA with 2.0 dB noise figure and 8.9 dB gain at 2 GHz. This amplifier achieves a Gain/NF/spl middot/P/sub dc/ ratio figure of merit of 2.10 (1/mW) which is the highest reported at S-band. Under low DC power bias of 2 V and 0.46 mA (0.92 mW), the amplifier achieves 5.2 dB gain, 3.01 dB noise figure and a Gain/P/sub dc/ figure of merit of 5.65 (dB/mW) which is also the highest reported in this frequency band. The HBT LNA consumes an area of 1.05/spl times/0.82 mm/sup 2/ and is fabricated using a relaxed 3 /spl mu/m emitter width low cost GaAs production foundry process. The high performance obtained from HBTs at vary low DC bias makes them attractive for portable wireless consumer applications.<>
Keywords :
III-V semiconductors; UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; gallium arsenide; integrated circuit noise; 0.92 to 2.1 mW; 2 GHz; 2 V; 2 to 3.01 dB; 3 micron; 5.2 to 8.9 dB; GaAs; HBT LNA; S-band; UHF IC; low cost GaAs production foundry process; low noise amplifiers; portable wireless consumer applications; ultra-low DC power operation; Costs; Foundries; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Low-noise amplifiers; Noise figure; Production;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470988
