Title :
Production DC screening for RF performance of a 900 MHz monolithic low noise amplifier
Author :
Sang-Gug Lee ; Schultz, R.D.
Author_Institution :
Semicond. Sector, Harris Corp., Melbourne, FL, USA
Abstract :
Novel approaches for production DC screening of a 900 MHz monolithic silicon bipolar low noise amplifier for noise figure and power gain are presented. The proposed techniques can be used in screening the performance of any RF IC by setting limits on the AC performance of the active devices used.<>
Keywords :
UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; electric noise measurement; elemental semiconductors; gain measurement; integrated circuit noise; integrated circuit testing; noise measurement; production testing; silicon; 900 MHz; AC performance limits; RF performance; Si; UHF IC; bipolar LNA; low noise amplifier; monolithic LNA; noise figure; power gain; production DC screening; Circuit noise; Costs; Low-noise amplifiers; Noise figure; Production; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Semiconductor device noise; Testing;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470989