Title :
A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier
Author :
Ng, G.I. ; Lai, R. ; Hwang, Y. ; Wang, H. ; Lo, D.C.W. ; Block, T. ; Tan, K. ; Streit, D.C. ; Dia, R.M. ; Freudenthal, A. ; Chow, P.D. ; Berenz, J.
Author_Institution :
Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA´s operating at W-band.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; passivation; 20 dB; 3.3 dB; 94 GHz; EHF; HEMT MMIC technology; InGaAs-InAlAs-InP; MIMIC; W-band; monolithic HEMT amplifier; multistage MMIC LNA; stabilization bakes; ultra low noise amplifier; wafer passivation; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Passivation; Production;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470990
