A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier

Author

Ng, G.I. ; Lai, R. ; Hwang, Y. ; Wang, H. ; Lo, D.C.W. ; Block, T. ; Tan, K. ; Streit, D.C. ; Dia, R.M. ; Freudenthal, A. ; Chow, P.D. ; Berenz, J.

Author_Institution

Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

63

Lastpage

66

Abstract

A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA´s operating at W-band.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; passivation; 20 dB; 3.3 dB; 94 GHz; EHF; HEMT MMIC technology; InGaAs-InAlAs-InP; MIMIC; W-band; monolithic HEMT amplifier; multistage MMIC LNA; stabilization bakes; ultra low noise amplifier; wafer passivation; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Passivation; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470990

Filename

470990