Title :
A novel monolithic HEMT harmonic mixer at Q-band
Author :
Katz, R. ; Maas, S. ; Sharma, A. ; Smith, D.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<>
Keywords :
HEMT integrated circuits; MMIC mixers; Schottky diode mixers; field effect MIMIC; millimetre wave mixers; 0.15 micron; 35 to 40 GHz; EHF; InGaAs-GaAs; MIMIC; MM-wave IC; Q-band; S-band LO signal; antiparallel HEMT Schottky diodes; monolithic HEMT harmonic mixer; pseudomorphic HEMT process; Band pass filters; Circuits; Frequency conversion; HEMTs; Phase locked loops; Power harmonic filters; Radio frequency; Schottky diodes; Semiconductor device measurement; Space technology;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470995