Title :
Very low-current and small-size GaAs MMICs for L-band front-end applications
Author :
Imai, Yuhki ; Tokumitsu, Masami ; Minakawa, Akira ; Sugeta, Takayuki ; Aikawa, Masayoshi
Author_Institution :
NTT LSI Lab., Atsugi, Japan
Abstract :
Very-low-current and small-size GaAs MMICs (monolithic microwave integrated circuits) were developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB with small LO power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltage.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; mixers (circuits); receivers; ultra-high-frequency amplifiers; 11.5 dB; 12.5 dB; 2.5 dB; 3 V; 8 mA; GaAs; L-band; LNA; MMICs; UHF; drain bias voltage; front-end applications; low-noise amplifier; lumped LC elements; mixer; monolithic microwave integrated circuits; uniplanar configurations; Circuit testing; FETs; Gallium arsenide; L-band; Laboratories; Low-noise amplifiers; MMICs; Noise figure; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69296
