A large displacement piezodriven silicon XY-microstage

Author

Sabri, Mohd Faizul Mohd ; Ono, Takahito ; Esashi, Masayoshi

Author_Institution

Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan

fYear

2009

fDate

21-25 June 2009

Firstpage

2405

Lastpage

2408

Abstract

This paper present the fabrication and integration processes employed in order to realize the Si-PZT hybrid XY-microstage. A silicon XY-microstage with dimensions of 20 times 20 times 0.4 mm containing Moonie amplification mechanisms is fabricated and evaluated. The experimental results show that this microstage containing a commercial PZT actuator and Moonie angle of 2 degrees produced a displacement of 82 mum and 60 mum at 70 V for the X and Y directions, respectively. The fabricated microstage demonstrates that the designed amplification mechanism is able to magnify the stroke up to 18 times.

Keywords

lead compounds; microactuators; micropositioning; silicon; Moonie amplification mechanisms; Moonie angle; PZT actuator; Si-PZT; Si-PZT hybrid XY-microstage; piezodriven silicon XY-microstage; Capacitive sensors; Electrostatic actuators; Fabrication; Low voltage; Mechanical engineering; Mechanical systems; Memory; Silicon; Springs; Substrates; Moonie amplification mechanism; PZT actuator; XY-microstage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285429

Filename

5285429