Title :
CMOS-integrated poly-SiGe cantilevers with read/write system for probe storage device
Author :
Severi, S. ; Heck, J. ; Chou, T.-K.A. ; Belov, N. ; Park, J.-S. ; Harrar, D. ; Jain, A. ; Van Hoof, R. ; Du Bois, B. ; De Coster, J. ; Pedreira, O.V. ; Willegems, M. ; Vaes, J. ; Jamieson, G. ; Haspeslagh, L. ; Adams, D. ; Rao, V. ; Decoutere, S. ; Witvro
Author_Institution :
IMEC Interuniversity Microelectron. Center, Leuven, Belgium
Abstract :
A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3times10-10 Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever.
Keywords :
CMOS memory circuits; Ge-Si alloys; cantilevers; micromechanical devices; semiconductor materials; sputter etching; CMOS-integrated poly-SiGe cantilevers; SiGe; compliant torsional suspension; dual-thickness structural layer; electrical read/write system; isotropic plasma etching; low-temperature amorphous silicon layer; micro-cantilevers; poly-SiGe technology; probe storage device; sharp tips; small initial bending; suspended platinum trace; CMOS technology; Circuits; Etching; Fabrication; Ferroelectric materials; Germanium silicon alloys; Scanning probe microscopy; Signal to noise ratio; Silicon germanium; Writing; CMOS-MEMS integration; Scanning Probe Microscopy (SPM); high capacity memory; micro cantilever; poly-SiGe; probe storage; sharp tip fabrication;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285430
