Monolithic CMOS-MEMS oscillators with micro-degree temperature resolution in air conditions

Author

Verd, J. ; Sansa, M. ; Uranga, A. ; Pey, C. ; Abadal, G. ; Perez-Murano, F. ; Barniol, N.

Author_Institution

Electron. Syst. Group, Univ. de les Illes Balears, Palma, Spain

fYear

2009

fDate

21-25 June 2009

Firstpage

2429

Lastpage

2432

Abstract

This paper reports the thermal characterization of MEMS resonator-based oscillators fabricated using a conventional 0.35-mum CMOS process. The MEMS resonators are sub-micrometer scale metal beams which resonance frequency is highly dependent on temperature (up to -2055 ppm/degC). Thanks to the monolithic integration of the oscillator electronics, the oscillator frequency stability is better than 1 ppm allowing temperature resolutions up to 0.00019degC for 0.1 s averaging time, which is at least one order of magnitude better than the best previously reported.

Keywords

CMOS integrated circuits; frequency stability; micromechanical resonators; microsensors; oscillators; temperature sensors; MEMS resonator; air condition; frequency stability; microdegree temperature resolution; monolithic CMOS-MEMS oscillator; size 0.35 mum; submicrometer scale metal beam; temperature sensor; thermal characterization; time 0.1 s; CMOS process; CMOS technology; Circuits; Micromechanical devices; Optical resonators; Resonance; Resonant frequency; Ring oscillators; Structural beams; Temperature sensors; CMOS-MEMS; Digital temperature sensors; Microresonators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285435

Filename

5285435