Title :
SVX/silicon detector studies
Author :
Bagby, L. ; Johnson, M. ; Lipton, R. ; Gu, W.
Author_Institution :
Fermi Nat. Accel. Lab., Batavia, IL, USA
Abstract :
AC coupled silicon detectors, being used for the Dφ upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ~50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3 μm), SVXH (rad hard 1.2 μm), and SVXIIb (rad soft 1.2 μm) amplifier/readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem
Keywords :
detector circuits; nuclear electronics; silicon radiation detectors; AC coupled silicon detectors; SVX detectors; SVX substrate; SVX/silicon detectors; SVXD; SVXH; SVXIIb; Si detectors; Silicon Vertex device; amplifier/readout devices; coupling capacitor; current diffusion; failed capacitors; failed detector coupling capacitors; neighboring channel saturation; surface currents; Capacitors; Circuit simulation; Clamps; Detectors; Diodes; Probes; Protection; Resistors; Silicon; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
DOI :
10.1109/NSSMIC.1995.504270
