Title :
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs
Author :
Poljak, M. ; Wang, Michael ; Zonja, S. ; Derek, V. ; Ivanda, M. ; Wang, K.L. ; Suligoj, Tomislav
Author_Institution :
Fac. of Electr. Eng. & Comput., Univ. of Zagreb, Zagreb, Croatia
Abstract :
Graphene field-effect transistors are fabricated using CVD-grown graphene and a wet transfer technique. Devices are characterized in terms of carrier mobility, contact resistance, output and transfer characteristics. We found that the mobility decreases and contact resistance increases with the decreasing graphene microstrip width. In addition, we found that graphene FET characteristics strongly depend on annealing time. The behavior of device characteristics is explained by discussing carrier scattering on defects and impurities, and the formation of pn-junctions in graphene.
Keywords :
annealing; carrier mobility; chemical vapour deposition; contact resistance; field effect transistors; graphene; CVD grown graphene; annealing time; carrier mobility; carrier scattering; contact resistance; microscale graphene FET; microstrip width; wet transfer technique; Annealing; Contact resistance; Fabrication; Field effect transistors; Graphene; Microstrip; Scattering;
Conference_Titel :
Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on
Conference_Location :
Opatija
Print_ISBN :
978-953-233-081-6
DOI :
10.1109/MIPRO.2014.6859527
