Title :
Highly linear broadband GaN power amplifier design
Author :
Sayed, Ahmed ; Boeck, Georg
Author_Institution :
Tech. Univ. Berlin, Berlin
Abstract :
In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is reported. Load-pull technique has been applied to introduce a compromising solution for the PA performance trade-off problem. Over the whole bandwidth a small signal gain of 14 plusmn 0.7 dB and an output return loss of better than - 10 dB have been achieved. The input return loss was better than -10 dB up to 3 GHz. Power and linearity performances have been measured and compared to simulations resulting in a very good agreement. At a frequency spacing of 100 kHz, minimum values of output IP3 and output IP2 have been evaluated and found to be 48.5 dBm and 59.3 dBm. At 1 dB power compression point, minimum Pout and Gp were found to be ges 37.3 dBm and ges 13.3 dB, respectively within the whole frequency band.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT; frequency 1 MHz to 3.4 GHz; highly linear broadband power amplifier; load-pull technique; power 5 W; power compression point; Bandwidth; Broadband amplifiers; Design engineering; Frequency; Gallium nitride; HEMTs; High power amplifiers; Impedance matching; Power amplifiers; Power generation;
Conference_Titel :
Radio Science Conference, 2008. NRSC 2008. National
Conference_Location :
Tanta Univ.
Print_ISBN :
978-977-5031-95-2
DOI :
10.1109/NRSC.2008.4542367