Film Bulk Acoustic-Wave Resonator (FBAR) based ultraviolet sensor

Author

Qiu, X. ; Zhu, J. ; Oiler, J. ; Yu, C. ; Wang, Z. ; Yu, H.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2009

fDate

21-25 June 2009

Firstpage

2354

Lastpage

2357

Abstract

This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 muW/cm², and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.

Keywords

acoustic resonators; bulk acoustic wave devices; dielectric thin films; ultraviolet detectors; zinc compounds; UV illumination; UV sensor; film bulk acoustic-wave resonator; frequency upshift; low intensity UV detection; resonant frequency; ultraviolet sensor; Acoustic sensors; Acoustic signal detection; Electrodes; Film bulk acoustic resonators; Frequency; Lighting; Photoconductivity; Sensor phenomena and characterization; Surface acoustic waves; Zinc oxide; FBAR; Frequency upshift; UV sensor; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285445

Filename

5285445