DocumentCode :
1852974
Title :
Efficient analog signal processing in nm CMOS technologies
Author :
Sansen, Willy
Author_Institution :
Katholieke Univ. Leuven, Leuven
fYear :
2008
fDate :
23-25 April 2008
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. In nanometer CMOS technologies, several new phenomena occur as a result of the shorter channel-lengths. The most important ones are velocity saturation and gate leakage currents. As a result analog signal processing suffers from reduced accuracy and more noise. Also the transconductance and speed are both limited by velocity saturation. Moreover the supply voltage has been reduced to values around 1 Volt, creating new challenges for analog signal processing. This presentation provides an overview of these phenomena. They are illustrated by a review of the most important building blocks for analog signal processing in nm CMOS technologies. Amplifiers and filters are discussed and compared based on generally accepted FOM (Figures of Merit). It is followed by an overview of sub-1 Volt circuits for various applications. Rail-to-rail amplifiers and amplifiers/filters configurations are given with both Gate and Bulk drives.
Keywords :
CMOS analogue integrated circuits; leakage currents; nanotechnology; amplifier configuration; analog signal processing; filter configuration; gate leakage currents; nanometer CMOS technologies; rail-to-rail amplifiers; supply voltage; velocity saturation; CMOS process; CMOS technology; Circuits; Filters; Leakage current; Noise reduction; Rail to rail amplifiers; Signal processing; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2008. VLSI-DAT 2008. IEEE International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1616-5
Electronic_ISBN :
978-1-4244-1617-2
Type :
conf
DOI :
10.1109/VDAT.2008.4542395
Filename :
4542395
Link To Document :
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