• DocumentCode
    1852974
  • Title

    Efficient analog signal processing in nm CMOS technologies

  • Author

    Sansen, Willy

  • Author_Institution
    Katholieke Univ. Leuven, Leuven
  • fYear
    2008
  • fDate
    23-25 April 2008
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. In nanometer CMOS technologies, several new phenomena occur as a result of the shorter channel-lengths. The most important ones are velocity saturation and gate leakage currents. As a result analog signal processing suffers from reduced accuracy and more noise. Also the transconductance and speed are both limited by velocity saturation. Moreover the supply voltage has been reduced to values around 1 Volt, creating new challenges for analog signal processing. This presentation provides an overview of these phenomena. They are illustrated by a review of the most important building blocks for analog signal processing in nm CMOS technologies. Amplifiers and filters are discussed and compared based on generally accepted FOM (Figures of Merit). It is followed by an overview of sub-1 Volt circuits for various applications. Rail-to-rail amplifiers and amplifiers/filters configurations are given with both Gate and Bulk drives.
  • Keywords
    CMOS analogue integrated circuits; leakage currents; nanotechnology; amplifier configuration; analog signal processing; filter configuration; gate leakage currents; nanometer CMOS technologies; rail-to-rail amplifiers; supply voltage; velocity saturation; CMOS process; CMOS technology; Circuits; Filters; Leakage current; Noise reduction; Rail to rail amplifiers; Signal processing; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2008. VLSI-DAT 2008. IEEE International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4244-1616-5
  • Electronic_ISBN
    978-1-4244-1617-2
  • Type

    conf

  • DOI
    10.1109/VDAT.2008.4542395
  • Filename
    4542395