A transceiver 10GBase-T in 90nm CMOS

Author

Liu, Kai Yin ; Chen, Yi Kuang ; Huang, Chen Chih ; Lee, Chao Cheng ; Lin, Leon ; Chou, Joseph

Author_Institution

Realtek Semicond., Hsinchu

fYear

2008

fDate

23-25 April 2008

Firstpage

5

Lastpage

8

Abstract

This work presents a single channel (cable) prototype lOGBase-T transceiver fabricated in a 90nm CMOS process. A 1.2V/3.3V dual supply is used. The transmitter, consuming 93.7mW, features a class- AB line driver using an AC coupled bias and a common-mode (CM) compensation capacitor transparent to the differential-mode (DM) path to achieve high efficiency. It achieves 59.51dB SFDR for a test signal at 30MHz. The receiver, consuming 24mW, features a PGA using a two-stage cascode Miller compensated op-amp and a multiple feedback low-pass filter. It achieves 59.7dB SFDR for a test signal at 100MHz. The total chip area is 1.7*1.36 mm².

Keywords

CMOS integrated circuits; capacitors; low-pass filters; operational amplifiers; transceivers; AC coupled bias; CMOS process; class-AB line driver; common-mode compensation capacitor; differential-mode path; dual supply; frequency 100 MHz; frequency 30 MHz; lOGBase-T transceiver; multiple feedback low-pass filter; power 24 mW; power 93.7 mW; single channel prototype; size 90 nm; transmitter; two-stage cascode Miller compensated op-amp; voltage 1.2 V; voltage 3.3 V; CMOS process; Capacitors; Delta modulation; Electronics packaging; Feedback; Operational amplifiers; Prototypes; Testing; Transceivers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2008. VLSI-DAT 2008. IEEE International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4244-1616-5

Electronic_ISBN

978-1-4244-1617-2

Type

conf

DOI

10.1109/VDAT.2008.4542399

Filename

4542399