Title :
A 10Gb/s Burst-Mode Laser Diode Driver for IEEE 802.3av 10G-EPON Applications
Author :
Lin, Ye ; Zhu, En ; Gu, Gaowei
Author_Institution :
Inst. of RF& OE-ICs, Southeast Univ., Nanjing, China
Abstract :
The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 10Gb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18¿m CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than 1ns. The dimension of the laser diode driver is 575¿m × 675¿m.
Keywords :
CMOS integrated circuits; delays; distributed feedback lasers; driver circuits; integrated optoelectronics; laser modes; optical design techniques; optical fibre LAN; optical transmitters; passive networks; quantum well lasers; CMOS; IEEE 802.3av symmetric-rate 10G-EPON ONU application; bit rate 10 Gbit/s; burst turn-on-off delay; burst-mode laser diode driver; ethernet passive optical networks; modulation current; multiquantum well DFB laser diode; optical design; optical transmitter; voltage 1.8 V; Bit rate; CMOS process; Delay; Diode lasers; EPON; Optical fiber networks; Optical network units; Passive optical networks; Power supplies; Standards Board; 10Gb/s ethernet passive optical networks (10G-EPON); 802.3av; CMOS; access network; burst-mode (BM); laser diode driver (LDD);
Conference_Titel :
Future Networks, 2010. ICFN '10. Second International Conference on
Conference_Location :
Sanya, Hainan
Print_ISBN :
978-0-7695-3940-9
Electronic_ISBN :
978-1-4244-5667-3
DOI :
10.1109/ICFN.2010.88
