Title :
Assembly influence on S-parameters of packaged transistor
Author :
Sokol, Vratislav ; Cerny, Petr ; Hoffmann, Karel ; Skvor, Zbynek
Author_Institution :
Dept. of Electromagn. Field, Czech Tech. Univ., Prague, Czech Republic
Abstract :
A proper analysis of the assembly influence on small-signal parameters of packaged transistor has been done. The S-parameters differences caused by assembly change are computed using the standard method and three new proposed methods that exploit 3-D model of the transistor package. The differences, accuracy and suitability of these methods are discussed. The results were verified experimentally for particular packaged transistor in frequency range 45 MHz-18 GHz.
Keywords :
S-parameters; UHF transistors; VHF devices; assembling; microwave transistors; semiconductor device models; semiconductor device packaging; 0.045 to 18 GHz; 3D model; EM simulation; S-parameters; assembly influence; component modeling; packaged transistor; scattering parameters; small-signal parameters; Assembly; Circuit simulation; Concrete; Design automation; Electromagnetic fields; Feedback; Microwave transistors; Packaging; Scattering parameters; Transmission line matrix methods;
Conference_Titel :
ARFTG Conference Digest, 2005. Spring 2005. 65th
Print_ISBN :
0-7803-8858-5
DOI :
10.1109/ARFTGS.2005.1500579
