• DocumentCode
    1853930
  • Title

    A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH

  • Author

    Engh, Lawrence D. ; Kordesch, Albert V. ; Liu, Chun-Mai

  • Author_Institution
    Winbond Electron. Corp. America, San Jose, CA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    115
  • Lastpage
    118
  • Abstract
    The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 μs. Algorithm control circuits occupy 1 mm2 of area in a 0.5 μm SSI FLASH process.
  • Keywords
    CMOS memory circuits; PLD programming; flash memories; 0.5 micron; 125 mus; 5 mV; SSI flash process; algorithm control circuits; cell model; cell variations; multi-level storage memory system; noise; self adaptive programming method; successive program cycle; Circuits; Current measurement; Flash memory; Flash memory cells; Iterative algorithms; Linear programming; Nonvolatile memory; Parallel programming; Pulse measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
  • Print_ISBN
    0-7803-7250-6
  • Type

    conf

  • DOI
    10.1109/CICC.2002.1012779
  • Filename
    1012779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1853930