Ellipsometry analysis of a-Si:H/SnO2:F textured structures

Author

Akagawa, Masataka ; Kageyama, Shota ; Fujiwara, Hiroyuki

Author_Institution

Center of Innovative Photovoltaic Syst., Gifu Univ., Gifu, Japan

fYear

2011

fDate

19-24 June 2011

Abstract

Spectroscopic ellipsometry (SE) has been applied successfully to characterize textured SnO₂:F substrates as well as a-Si:H layers formed on textured SnO₂:F substrates. For the textured SnO₂:F substrates, we demonstrates that the carrier concentration and mobility can be extracted optically, in addition to the detailed film structure. Moreover, we have developed a new optical model that allows the complete evaluation of non-uniform a-Si:H/SnO₂:F textured structures. The a-Si:H/SnO₂:F textured structure deduced from SE shows remarkable agreement with that observed from transmission electron microscopy (TEM). The SE analysis method developed in this study can be applied further to establish high-precision characterization of large-area a-Si:H modules.

Keywords

carrier density; carrier mobility; elemental semiconductors; ellipsometry; fluorine; hydrogen; semiconductor thin films; silicon; substrates; surface roughness; surface texture; tin compounds; transmission electron microscopy; transparency; Si:H-(SnO₂:F); TEM; carrier concentration; carrier mobility; film structure; high-precision characterization; optical model; spectroscopic ellipsometry; surface roughness; textured substrate structure; transmission electron microscopy; transparency; Ellipsometry; Optical reflection; Optical refraction; Optical variables control; Rough surfaces; Substrates; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6185873

Filename

6185873