Four-level two-electron FDTD model of lasing action in a semiconductor

Author

Shih-Hui Chang ; Hui Cao ; Taflove, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA

Volume

4

fYear

2003

fDate

22-27 June 2003

Firstpage

382

Abstract

This paper reports a new multiphysics FDTD model of the lasing dynamics of a semiconductor. Our model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. Transitions between the energy levels are governed by coupled rate equations and the Pauli exclusion principle. Our technique allows us to solve for the full dynamics of lasing action in semiconductor media.

Keywords

conduction bands; distributed Bragg reflector lasers; finite difference time-domain analysis; laser cavity resonators; laser theory; laser transitions; optical pumping; semiconductor lasers; valence bands; Pauli exclusion principle; conduction bands; coupled rate equations; distributed Bragg reflector laser; four-level two-electron model; lasing action; lasing dynamics; lasing threshold; multiphysics FDTD model; optically pumped laser cavity; oscillation equations; population differences; semiconductor band structure; semiconductor media; valence bands; Astronomy; Electron emission; Electron optics; Energy states; Equations; Finite difference methods; Optical pumping; Physics; Stimulated emission; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 2003. IEEE

Conference_Location

Columbus, OH, USA

Print_ISBN

0-7803-7846-6

Type

conf

DOI

10.1109/APS.2003.1220201

Filename

1220201