Title :
Four-level two-electron FDTD model of lasing action in a semiconductor
Author :
Shih-Hui Chang ; Hui Cao ; Taflove, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
This paper reports a new multiphysics FDTD model of the lasing dynamics of a semiconductor. Our model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. Transitions between the energy levels are governed by coupled rate equations and the Pauli exclusion principle. Our technique allows us to solve for the full dynamics of lasing action in semiconductor media.
Keywords :
conduction bands; distributed Bragg reflector lasers; finite difference time-domain analysis; laser cavity resonators; laser theory; laser transitions; optical pumping; semiconductor lasers; valence bands; Pauli exclusion principle; conduction bands; coupled rate equations; distributed Bragg reflector laser; four-level two-electron model; lasing action; lasing dynamics; lasing threshold; multiphysics FDTD model; optically pumped laser cavity; oscillation equations; population differences; semiconductor band structure; semiconductor media; valence bands; Astronomy; Electron emission; Electron optics; Energy states; Equations; Finite difference methods; Optical pumping; Physics; Stimulated emission; Time domain analysis;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2003. IEEE
Conference_Location :
Columbus, OH, USA
Print_ISBN :
0-7803-7846-6
DOI :
10.1109/APS.2003.1220201
